| 类型 | 描述 |
|---|---|
| 封装/外壳 | TO-220-2 |
| 安装类型 | Through Hole |
| 速度 | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| 技术 | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 200pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| 供应商器件封装 | TO-220AC |
| 工作温度 - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 4 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
| 属性 | 描述 |
|---|---|
| RoHS 状态 | ROHS3 Compliant |
| 湿气敏感性等级 (MSL) | 1 (Unlimited) |
| REACH 状态 | Reach unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |